Abstract
This work presents the study of the dark current density and the capacitance for porous silicon prepared by photo-electrochemical etching for n-type silicon with laser power density of 10mw/cm2and wavelength(650nm) under different anodization time(30,40,50,60)minute.Theresults obtained from this study shows different chara that differentcharacteristic of porous diffecteristics for the different porous Silicon layers.
Keywords
Etching
nano structure
Porous silicon