Abstract
A simple analytical expression for the standard deviation of channel noise for Au-AlxGa1-xAs/GaAs heterostructure field-effect transistors (HFETs) is developed based on Monte-Carlo formulation of field-dependent mobility and a linear charge control model. In addition of this expression is explicit function of HFETs geometry parameters and biasing conditions, it estimates the noise performance with respect to the composition mole fraction (x) and doping concentration (Nd) and hence is very useful for HFET-based devices design and optimization purposes. A simulation of channel noise with respect to biasing conditions, composition mole fraction and doping concentration is performed. The simulation shows the decreasing of noise at high doping concentration and that the noise increases slightly with and seems to be independent of composition mole fraction at certain biasing conditions
