Abstract
In this work, BaTiO3 thin films pure and doped with oxides (MoO3,V2O5 and NiO) were
deposited using pulsed laser deposition (PLD) technique with thickness equal to (300nm) on
glass substrates at temperature equal to (573K). The effects of annealing at temperatures
(673K,773K) and doping on the optical and electrical properties have been investigated. UVVIS
transmittance measurements showed that the films are highly transparent in the nearinfrared
region for as deposited films and in the visible region for annealing films at
temperatures (673K,773K),while the absorption edge of BaTiO3 films doped with
(MoO3,V2O5 and NiO) was shifted to the visible region. The optical energy gap was
calculated and was found to be (3.6eV) for as deposited films, and this value increases from
(3.69eV) to (3.8eV) with increasing annealing temperature from (673K) to (773K), and
decreases with different elements oxides dopants. The optical constants such as refractive
index, extinction coefficient and real and imaginary part of dielectric constant have been
calculated. The electrical properties of these films were studied under different annealing
temperatures and different doping materials. The d.c conductivity for all deposited films
decreases from (١.٣٦ 10-٧) (.cm)-1 to (٦.١٨ 10-6 ) (.cm)-1 and increase in activation
energy with increase of annealing temperature, while the d.c conductivity increase and
activation energy decreases with different elements oxides dopants .
Keywords: BaTiO3 thin films, pulsed laser deposition, optical and electrical Properties.
deposited using pulsed laser deposition (PLD) technique with thickness equal to (300nm) on
glass substrates at temperature equal to (573K). The effects of annealing at temperatures
(673K,773K) and doping on the optical and electrical properties have been investigated. UVVIS
transmittance measurements showed that the films are highly transparent in the nearinfrared
region for as deposited films and in the visible region for annealing films at
temperatures (673K,773K),while the absorption edge of BaTiO3 films doped with
(MoO3,V2O5 and NiO) was shifted to the visible region. The optical energy gap was
calculated and was found to be (3.6eV) for as deposited films, and this value increases from
(3.69eV) to (3.8eV) with increasing annealing temperature from (673K) to (773K), and
decreases with different elements oxides dopants. The optical constants such as refractive
index, extinction coefficient and real and imaginary part of dielectric constant have been
calculated. The electrical properties of these films were studied under different annealing
temperatures and different doping materials. The d.c conductivity for all deposited films
decreases from (١.٣٦ 10-٧) (.cm)-1 to (٦.١٨ 10-6 ) (.cm)-1 and increase in activation
energy with increase of annealing temperature, while the d.c conductivity increase and
activation energy decreases with different elements oxides dopants .
Keywords: BaTiO3 thin films, pulsed laser deposition, optical and electrical Properties.