Abstract
In this paper the SnO2 will be examined to be used as a transparent
antireflection coating with the n –type silicon wafer to fabricate the
deposited SnO2 silicon Solar cell using vacuum evaporation technique.
This SnO2 layer is simultaneously an antireflecting coating and a
transparent upper contact. The oxidation of the Si surface takes place
simultaneously with the evaporation process. A semiconductor –
insulator – semiconductor (SIS) structure was obtained in such a way.
The photoelectrical parameters of such SIS system of AM 1.5 conditions
are: the short circuit current 18.5 mA/cm2, the open circuit voltage 0.48
V and the efficiency is 7.0%. The subgap response of the resulted
structure is particularly strong and extends to wavelength up to 1100nm
antireflection coating with the n –type silicon wafer to fabricate the
deposited SnO2 silicon Solar cell using vacuum evaporation technique.
This SnO2 layer is simultaneously an antireflecting coating and a
transparent upper contact. The oxidation of the Si surface takes place
simultaneously with the evaporation process. A semiconductor –
insulator – semiconductor (SIS) structure was obtained in such a way.
The photoelectrical parameters of such SIS system of AM 1.5 conditions
are: the short circuit current 18.5 mA/cm2, the open circuit voltage 0.48
V and the efficiency is 7.0%. The subgap response of the resulted
structure is particularly strong and extends to wavelength up to 1100nm
Abstract
يهدف هذا البحث الى اختبار مادة الـ SnO2 كطبقة شفافة ومانعة للأنعكاس مع الشريحة السليكونية نوع n لتصنيع الخلية الشمسية SnO2-Si(n) باستخدام جهاز التبخير الفراغى. حيث تم أكسدة طبقة السليكون بالتعاقب خلال عملية التبخير وبالتالي تكوين تركيبة شبه موصل ـ عازل ـ شبه موصل (SIS). تم اختبار الخواص الكهربائية والضوئية للخلية الناتجة تحت ظروف AM1.5 ووجد بأن تيار الدائرة القصيرة يساوي 18.5mA/cm2 وفولتية الدائرة المفتوحة تساوى 0.48 فولت وكفاءة الخلية بحدود 7%0