Abstract
In this work In2O3 and Sn-doped ITO nanoparticles were prepared by sol-gel
method and deposited on quartz substrate by dip coating technique at different doping
concentration of (5, 10 and 15%). The samples were annealed at 550 oC at constant
time (60 min). X-ray analysis confirmed the formation of polycrystalline cubic phase
that decreases in crystalline size with increasing doping concentration. The optical
properties of Sn-ITO nanostructure thin film were studied. The transmittance was
measured in the wavelength range of (300nm to 1100 nm) for all thin films. The
sensitivity towards NO2 gas was measured, when In2O3 was doped with Sn at
different concentrations
method and deposited on quartz substrate by dip coating technique at different doping
concentration of (5, 10 and 15%). The samples were annealed at 550 oC at constant
time (60 min). X-ray analysis confirmed the formation of polycrystalline cubic phase
that decreases in crystalline size with increasing doping concentration. The optical
properties of Sn-ITO nanostructure thin film were studied. The transmittance was
measured in the wavelength range of (300nm to 1100 nm) for all thin films. The
sensitivity towards NO2 gas was measured, when In2O3 was doped with Sn at
different concentrations
Keywords
ITO
NO2 gas sensor
Sn-doped
sol-gel method